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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B5817WS FEATURES Power dissipation PD: 200 mW (Tamb=25) SCHOTTKY BARRIER DIODE SOD-323 + Collector current 1 A IF: Collector-base voltage VR: 20 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 - MARKING: SJ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Symbol V(BR) IR VF CD Test conditions IR= 1mA VR=20V IF=1A IF=3A MIN 20 MAX UNIT V 1 0.45 0.75 120 mA V VR=4V, f=1MHz pF |
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